Three routes to increase the output current of the spin-valve transistor
Erve van 't, O.M.J. and Jansen, R. and Postma, F.M. and Lodder, J.C. (2002) Three routes to increase the output current of the spin-valve transistor. In: IEEE International Magnetics Conference, INTERMAG Europe 2002, 28 April-2 May 2002, Amsterdam, The Netherlands.
|Abstract:||Summary form only given.
The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 2002 IEEE|
|Link to this item:||http://purl.utwente.nl/publications/55893|
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