An improved method for determining the inversion layer mobility of electrons in trench MOSFETs

Heuvel van den, M.G.L. and Hueting, R.J.E. and Hijzen, E.A. and Zandt in 't, M.A.A. (2003) An improved method for determining the inversion layer mobility of electrons in trench MOSFETs. In: IEEE 15th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2003, April 14-17 2003, Cambridge, UK.

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Abstract:	For the first time trench sidewall effective electron mobility (/spl mu//sub eff/) values were determined by using the split capacitance-voltage (CV) method for a large range of transversal effective field (E/sub eff/) from 0.1 up to 1.4 MV/cm. The influences of crystal orientation, doping concentration and, for the first time, temperature were investigated. In conclusion, the results show that (1) the split CV method is an accurate method for determining /spl mu//sub eff/(E/sub eff/) data in trench MOSFETs, (2) the ${100}$ /spl mu//sub eff/ data approach published data of planar MOSFETs for high E/sub eff/ and (3) the mobility behavior can be explained with generally accepted scattering models for the entire range of E/sub eff/. The results are important for the optimization of trench power devices.
Item Type:	Conference or Workshop Item
Copyright:	© 2003 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/55836
Official URL:	http://dx.doi.org/10.1109/ISPSD.2003.1225257
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