An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2

Keim, E.G. and Silfhout van, A. (1985) An investigation of the interaction of N2O with the Si(111)-7 × 7 surface using AES and optical reflectometry; A comparison with O2. Surface Science, 152-15 (2). pp. 1096-1102. ISSN 0039-6028

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Abstract:	At 300 K, N2O decomposes into N2, leaving behind atomic oxygen at the Si(111)¿7 × 7 surface. Decomposition at two different sites is proposed, having the overall initial reaction probability: s(0) = (6.7 ± 0.7) × 106. SiOx(x not, vert, similar 1) bonds are predominantly formed, saturation occurring at monolayer coverage. This oxygen monolayer appears to completely prevent further oxygen uptake by additional N2O or O2 exposures, in contrast with the adsorption behaviour of O2 on Si(111)-7 × 7, which exhibits slow sorption beyond one monolayer.
Item Type:	Article
Copyright:	© 1985 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Solid State Physics (VSF)
Link to this item:	http://purl.utwente.nl/publications/55481
Official URL:	http://dx.doi.org/10.1016/0039-6028(85)90525-4
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