Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2

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Keim, E.G. and Wolterbeek, L. and Silfhout van, A. (1987) Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2. Surface Science, 180 (2-3). pp. 565-598. ISSN 0039-6028

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Abstract:This paper describes a study concerning the interaction of molecular oxygen (O2) and nitrous oxide (N2O) with the clean Si(100) 2 × 1 surface in ultrahigh vacuum at 300 K. Differential reflectometry (DR) in the photon energy range of 1.5¿4.5 eV, Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to monitor these solid-gas reactions. With this combination of techniques it is possible to make an analysis of the (geometric and electronic) structure and chemical composition of the surface layer. The aim of the present study was to give a description of the geometric nature of the oxygen covered Si(100) surface. For that purpose we have used both molecular (O2) and atomic oxygen (as released by decomposition of N2O) to oxidize the clean Si(100)2 × 1 surface.
Item Type:Article
Copyright:© 1987 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/55480
Official URL:http://dx.doi.org/10.1016/0039-6028(87)90226-3
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