Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

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Nguyen, Q.D. and Elwenspoek, M. (2005) Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH. In: 16th MicroMechanics Europe Workshop, MME 2005, 4–6 September 2005, Göteborg, Sweden (pp. pp. 45-48).

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Abstract:The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientations close to (111) indicate that, at these surfaces, etching follows a step mechanism. Additionally it shows a difference in reactivity between monohydride and dihydride terminated steps towards both chemical etching and electrochemical oxidation. Morphology changes have also been observed, in particular on (110) surface, where the macroscopic surface becomes smoother at positive bias.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/54402
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Metis ID: 228537