Fabrication of thick silicon nitride blocks for integration of RF devices

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Fernandez, L.J. and Berenschot, J.W. and Sesé, J. and Wiegerink, R.J. and Flokstra, J. and Jansen, H.V. and Elwenspoek, M.C. (2005) Fabrication of thick silicon nitride blocks for integration of RF devices. Electronics Letters, 41 (3). pp. 124-125. ISSN 0013-5194

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Abstract:A fabrication process for the creation of thick (tens of micrometres) silicon nitride blocks embedded in silicon wafers has been developed. This new technology allows the use of silicon nitride as dielectric material for radio frequency (RF) circuits on standard CMOS-grade silicon wafers. Measurement results show that a performance similar to that of dedicated glass substrates can be reached.
Item Type:Article
Copyright:© 2005 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/54387
Official URL:http://dx.doi.org/10.1049/el:20057499
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