Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators
Faber, Erik J. and Smet, Louis C.P.M. de and Olthuis, Wouter and Zuilhof, Han and Sudhölter, Ernst J.R. and Bergveld, Piet and Berg, Albert van den (2005) Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 Nov. 2005, Veldhoven, the Netherlands (pp. pp. 6-10).
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|Abstract:||Abstract—The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Via
multiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.
|Item Type:||Conference or Workshop Item|
|Copyright:||© STW, Technology Foundation 2005|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/54332|
|Export this item as:||BibTeX|
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