Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators


Share/Save/Bookmark

Faber, Erik J. and Smet de, Louis C.P.M. and Olthuis, Wouter and Zuilhof, Han and Sudhölter, Ernst J.R. and Bergveld, Piet and Berg van den, Albert (2005) Covalently Attached 1-Alynes on Silicon Surfaces Provide Superior Insulators. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 Nov. 2005, Veldhoven, the Netherlands.

Full text not available from this repository. The author is invited to upload the full text of this publication.

Abstract:Abstract—The influence of silicon surface modification via Si-C18H37 devices on n-type silicon is studied by forming MIS (metal-insulator-silicon) diodes via a mercury-probe. Both the influence of the monolayer molecule (1-octadecene/1-octadecyne) and substrate orientation (<100>/<111>) are investigated. Via
multiple J-V and C-V measurements relevant parameters are derived to obtain information on both reproducibility and monolayer and silicon-monolayer interface properties. It was found that 1-alkynes, which are able to make 2 Si-C bonds, have superior insulating properties as compared to 1-alkenes, which are able to make only a single Si-C bond. There was no noticeable influence of substrate orientation, which indicated the broad usability of such monolayers. The ease of fabrication together with the outstanding electrical properties show the potential of these monolayers in creating hybrid molecularsilicon devices.
Item Type:Conference or Workshop Item
Copyright:© STW, Technology Foundation 2005
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/54332
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 228366