Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor

Gokcan, H. and Lodder, J.C. and Jansen, R. (2006) Effect of nonmagnetic spacer on hot-electron transport in the spin-valve transistor. Materials Science and Engineering B: Solid-state materials for advanced technology, 126 (2-3). pp. 129-132. ISSN 0921-5107

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Abstract:	The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SVT) is reported. Au, Cu and Ta have been used in the nonmagnetic spacer of the Ni80Fe20/NM/Co spin-valve base. Devices with Cu show 1.5 times higher output current than those with Au at comparable magnetic sensitivity. Structures with Ta spacer show a reduction in the magnetocurrent (MC) from 300% to 9% while the transfer ratio is reduced by three orders of magnitude compared to devices with Au and Cu. The collector current of the spin-valve transistor with Cu spacer increases linearly with emitter current, and a collector current of 64 uA is achieved.
Item Type:	Article
Copyright:	© 2006 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Nano-Electronics (NE)
Link to this item:	http://purl.utwente.nl/publications/53699
Official URL:	http://dx.doi.org/10.1016/j.mseb.2005.09.034
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