Charge pumping at radio frequencies [MOSFET device interface state density measurement]


Sasse, G.T. and Vries, H. de and Schmitz, J. (2005) Charge pumping at radio frequencies [MOSFET device interface state density measurement]. In: International Conference on Microelectronic Test Structures, ICMTS, 4-7 April 2005, Leuven, Belgium (pp. pp. 229-233).

open access
Abstract:In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.
Item Type:Conference or Workshop Item
Copyright:©2005 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 226525