The effect of dislocation loops on the light emission of silicon LEDs


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Hoang, T. and LeMinh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: 35th European Solid-State Device Research Conference, ESSDERC, 12-16 Sept. 2005 , Grenoble, France (pp. pp. 359-362).

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Abstract:Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.
Item Type:Conference or Workshop Item
Copyright:© 2005 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/53585
Official URL:http://dx.doi.org/10.1109/ESSDER.2005.1546659
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