Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces as Alternative Gate Insulators

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Faber, Erik J. and Smet de, Louis C.P.M. and Olthuis, Wouter and Zuilhof, Han and Sudhölter, Ernst J.R. and Bergveld, Piet and Berg van den, Albert (2005) Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces as Alternative Gate Insulators. ChemPhysChem, 6 (10). pp. 2153-2166. ISSN 1439-4235

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Abstract:Herein, the influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type (100) and n-type (100) silicon is studied by forming MIS (metal–insulator–semiconductor) diodes using a mercury probe. From current density–voltage (J–V) and capacitance–voltage (C–V) measurements, the relevant parameters describing the electrical behavior of these diodes are derived, such as the diode ideality factor, the effective barrier height, the flatband voltage, the barrier height, the monolayer dielectric constant, the tunneling attenuation factor, and the fixed charge density (Nf). It is shown that the J–V behavior of our MIS structures could be precisely tuned via the monolayer thickness. The use of n-type silicon resulted in lower diode ideality factors as compared to p-type silicon. A similar flatband voltage, independent of monolayer thickness, was found, indicating similar properties for all silicon–monolayer interfaces. An exception was the C10-based monolayer device on p-type silicon. Furthermore, low values of Nf were
found for monolayers on p-type silicon (=6A1011 cm-2). These results suggest that SiClinked monolayers on flat silicon may be a viable material for future electronic devices.
Item Type:Article
Copyright:© 2005 Wiley-Interscience
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/52855
Official URL:http://dx.doi.org/10.1002/cphc.200500120
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