Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs

Hoekstra, E. (2005) Large Signal Excitation Measurement Techniques for RTS Noise in MOSFETs. In: EUROCON 2005 "Computer as a tool", November, 22-24, 2005, Serbia & Montenegro, Belgrade.

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Abstract:	This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise. The proposed measurement technique makes trap-occupancy observation possible for every bias-situation, including the OFF-state of the transistor.
Item Type:	Conference or Workshop Item
Copyright:	©2005 IEEE
Research Group:	Integrated Circuit Design (ICD) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/52838
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