The Impact of Deuterated CMOS processing on Gate Oxide Reliability

Hof, A.J. and Hoekstra, E. and Kovalgin, A.Y. and Schaijk van, R. and Baks, W.M. and Schmitz, J. (2005) The Impact of Deuterated CMOS processing on Gate Oxide Reliability. IEEE Transactions on Electron Devices, 52 (9). pp. 2111-2115. ISSN 0018-9383

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Abstract:	In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal anneal (PMA). The oxide bulk degradation was evaluated using charge-to-breakdown and stress-induced leakage current; and the oxide interface degradation using hot-carrier degradation and low-frequency noise. The obtained results show that the oxide bulk does not benefit from the presence of deuterium, regardless of the stage of deuterium introduction, or the gate oxide thickness. The oxide interface is more stable only when deuterium is introduced in the PMA.
Item Type:	Article
Copyright:	© 2005 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/52778
Official URL:	http://dx.doi.org/10.1109/TED.2005.854290
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