Reduction of 1/f Noise by Switched Biasing: an Overview

Klumperink, Eric and Wel van der, Arnoud and Kolhatkar, Jay and Hoekstra, Eric and Salm, Cora and Wallinga, Hans and Nauta, Bram (2005) Reduction of 1/f Noise by Switched Biasing: an Overview. In: ProRISC 2005, 16th Workshop on Circuits, Systems and Signal Processing, 17-18 November 2005, Veldhoven, The Netherlands.

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Abstract:	MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.
Item Type:	Conference or Workshop Item
Copyright:	© STW, Technology Foundation 2005
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/52606
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