Surface Micromachined Fabrication of Piezoelectric AlN Unimorph Suspension Devices for RF Resonator Applications

Saravanan, S. and Berenschot, E. and Krijnen, G. and Elwenspoek, M. (2005) Surface Micromachined Fabrication of Piezoelectric AlN Unimorph Suspension Devices for RF Resonator Applications. In: 13th International Conference on Solid-StateSensors, Actuators and Microsystems, Transducers 2005, June 5-9, 2005, Seoul, Korea.

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Abstract:	We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2 eff = 1.7 %.
Item Type:	Conference or Workshop Item
Copyright:	© 2005 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/52581
Official URL:	http://dx.doi.org/10.1109/SENSOR.2005.1497334
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