Surface Micromachined Fabrication of Piezoelectric AlN Unimorph Suspension Devices for RF Resonator Applications


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Saravanan, S. and Berenschot, E. and Krijnen, G. and Elwenspoek, M. (2005) Surface Micromachined Fabrication of Piezoelectric AlN Unimorph Suspension Devices for RF Resonator Applications. In: 13th International Conference on Solid-StateSensors, Actuators and Microsystems, Transducers 2005, June 5-9, 2005, Seoul, Korea (pp. pp. 1362-1365).

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Abstract:We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2 eff = 1.7 %.
Item Type:Conference or Workshop Item
Copyright:© 2005 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/52581
Official URL:http://dx.doi.org/10.1109/SENSOR.2005.1497334
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