Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution

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Wel van der, A.P. and Klumperink, E.A.M. and Hoekstra, E. and Nauta, B. (2005) Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution. Applied Physics Letters, 87 (18). 183507/1-183507/3. ISSN 0003-6951

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Abstract:In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect transistors when the device is periodically and rapidly cycled between an "on" and an "off" bias state. We derive the effective RTS time constants for this case using Shockley-Read-Hall statistics applied under transient conditions. In this way, we show that the oft-observed reduction in RTS noise under such bias conditions can be explained by a nonuniform (e.g., U-shaped) distribution in energy of interface traps.
Item Type:Article
Copyright:© 2005 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/52565
Official URL:http://dx.doi.org/10.1063/1.2128056
Publisher URL:http://link.aip.org/link/?APPLAB/87/183507/1
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