Faceting of {010} steps on Si(001) and Ge(001) surfaces

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Zandvliet, H.J.W. and Gurlu, O. and Gastel van, R. and Poelsema, B. (2004) Faceting of {010} steps on Si(001) and Ge(001) surfaces. Physical Review B: Condensed matter and materials physics, 69 (12). p. 125311. ISSN 1098-0121

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Abstract:We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.
Item Type:Article
Copyright:© 2004 The American Physical Society
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/48890
Official URL:http://dx.doi.org/10.1103/PhysRevB.69.125311
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