Wide-band CMOS low-noise amplifier exploiting thermal-noise canceling


Bruccoleri, Federico and Klumperink, Eric A.M. and Nauta, Bram (2004) Wide-band CMOS low-noise amplifier exploiting thermal-noise canceling. IEEE journal of solid-state circuits, 39 (2). pp. 275-282. ISSN 0018-9200

open access
Abstract:Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.
Item Type:Article
Copyright:© 2004 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/48797
Official URL:https://doi.org/10.1109/JSSC.2003.821786
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 220543