Gate Oxide Reliability and Deuterated CMOS Processing


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Hof, A.J. and Kovalgin, A.Y. and Schmitz, J. and Schaijk, R. van and Baks, W.M. (2004) Gate Oxide Reliability and Deuterated CMOS Processing. In: IEEE International Integrated Reliability Workshop, 18-21 October 2004, Lake Tahoe, USA (pp. pp. 7-10).

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Abstract:In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/47977
Official URL:http://dx.doi.org/10.1109/IRWS.2004.1422727
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Metis ID: 219049