Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation


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Kolhatkar, J.S. and Hoekstra, E. and Salm, C. and Wel, A.P. van der and Klumperink, E.A.M. and Schmitz, J. and Wallinga, H. (2004) Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation. In: IEEE International Electron Devices Meeting, IEDM, 13-15 Dec. 2004, San Francisco, CA, USA (pp. pp. 759-762).

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Abstract:The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/47973
Official URL:http://dx.doi.org/10.1109/IEDM.2004.1419283
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