Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation

Kolhatkar, J.S. and Hoekstra, E. and Salm, C. and Wel van der, A.P. and Klumperink, E.A.M. and Schmitz, J. and Wallinga, H. (2004) Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation. In: IEEE International Electron Devices Meeting, IEDM, 13-15 Dec. 2004, San Francisco, CA, USA.

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Abstract:	The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.
Item Type:	Conference or Workshop Item
Copyright:	© 2004 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC) Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/47973
Official URL:	http://dx.doi.org/10.1109/IEDM.2004.1419283
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