3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18/spl mu/m CMOS


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Radovanović, Saša and Annema, Anne-Johan and Nauta, Bram (2004) 3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18/spl mu/m CMOS. In: IEEE International Solid-State Circuits Conference, ISSCC 2004, 15-19 February 2004, San Francisco, CA, USA (pp. pp. 472-540).

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Abstract:A 3 Gb/s optical detector with integrated photodiode and pre-amplifier for 850 nm light is presented. The IC is implemented in standard 0.18 /spl mu/m CMOS. The data rate is achieved by using an inherently robust analog equalizer without sacrificing responsivity.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/47889
Official URL:http://dx.doi.org/10.1109/ISSCC.2004.1332799
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Metis ID: 218878