A micro-scale hot-surface device based on non-radiative carrier recombination


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Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2004) A micro-scale hot-surface device based on non-radiative carrier recombination. In: 34th European Solid-State Device Research Conference, ESSDERC, 21-23 September 2004, Leuven, Belgium (pp. pp. 353-356).

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Abstract:This work employs the idea of making micro-scale hot-surface devices (e.g. sensors, flow meters, micro reactors, etc) based on generation of heat due to nonradiative recombination of carriers in a thin (13 nm) poly silicon surface layer. An important part of the device is a nano-scale (10-100 nm) conductive link created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). Using this approach, we designed and realized a new silicon device with the hot surface reduced to a sub-/spl mu/m-size area, operating at very low power down to sub-/spl mu/W. From the experiments, such a device can be used as a heat source as well as a sensitive detector of heat. In this paper, we describe the thermo-electrical properties of fabricated devices and demonstrate their feasibility to perform as gas- adsorption- desorption sensors operating at extremely low power consumption.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/47870
Official URL:http://dx.doi.org/10.1109/ESSDER.2004.1356562
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