Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers

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Sarajlic, E. and Boer, M.J. de and Jansen, H.V. and Arnal, N. and Puech, M. and Krijnen, G. and Elwenspoek, M. (2004) Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers. Journal of Micromechanics and Microengineering, 14 (9). S70-S75. ISSN 0960-1317

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Abstract:A bulk micromachining technology for fabrication of micro electro mechanical systems (MEMS) in a standard silicon wafer is presented. A fabrication process, suitable for full integration with on-chip electronics, employs advanced plasma processing to etch, passivate and release micromechanical structures in a single plasma system, and vertical trench isolation to obtain electrical isolation between the released components. Distinct electrical domains can be defined even on movable parts. The sophisticated electrical isolation between high-aspect-ratio single-crystal silicon (SCS) components allows simplification of the fabrication and improvement of the performance of existing devices and design of entirely new MEMS. The presented technology is an attractive platform for both fabrication and rapid prototyping of MEMS. This is due to a short processing time, a large freedom of design, high process flexibility and low-cost of the starting SCS substrate relative to SOI substrates. Several example microstructures demonstrating the capabilities of this technology have been successfully fabricated.
Item Type:Article
Copyright:© Institute of Physics and IOP Publishing Limited 2004
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/47650
Official URL:http://dx.doi.org/10.1088/0960-1317/14/9/012
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