Fast Thermal Cycling-Enhanced Electromigration in Power Metallization

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Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. Ton and Kuper, Fred G. (2004) Fast Thermal Cycling-Enhanced Electromigration in Power Metallization. IEEE Transactions on Device and Materials Reliability, 4 (2). pp. 246-255. ISSN 1530-4388

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Abstract:Multilevel interconnects used in power ICs are susceptible to short circuit failure due to a combination of fast thermal cycling and electromigration stresses. In this paper, we present a study of electromigration-induced extrusion short-circuit failure in a standard two level metallization currently used in power ICs and in particular the effect of fast thermal cycling on the subsequent electromigration lifetime. A special test chip was designed, in which the electromigration test structure is integrated with a heating element and a diode as temperature sensor in order to generate fast temperature swings and to monitor them. Experimental results showed that with the introduction of fast thermal cycling as a preconditioning, the electromigration lifetime is significantly reduced. We observed that the reduction of the electromigration lifetime depends on the stress time, temperature range and the minimum temperature. Electromigration simulations using a two-dimensional simulator confirm the extrusion short circuit as failure mechanism.
Item Type:Article
Copyright:©2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/47483
Official URL:http://dx.doi.org/10.1109/TDMR.2004.826589
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Metis ID: 218015