Leakage current correction in quasi-static C-V measurements


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Schmitz, J. and Weusthof, M.H.H. and Hof, A.J. (2004) Leakage current correction in quasi-static C-V measurements. In: International Conference on Microelectronic Test Structures, ICMTS, 22-25 March 2004, Awaji Yumebutai, Japan.

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Abstract:The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/47466
Official URL:http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1309475
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