Wet anisotropic etching for fluidic 1D nanochannels


Haneveld, Jeroen and Jansen, Henri and Berenschot, Erwin and Tas, Niels and Elwenspoek, Miko (2003) Wet anisotropic etching for fluidic 1D nanochannels. Journal of Micromechanics and Microengineering, 13 (4). S62-S66. ISSN 0960-1317

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into langle110rangle silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after bonding the nanopatterned wafers with silicon or borofloat-glass wafers. The nanofabrication process is significantly simplified by using native oxide as the main mask material. The etch depth of the nanochannels is limited by the thickness of the native oxide layer, and by the selectivity of the oxide/silicon etch rate (estimated to be at least 250 for langle110rangle silicon at room temperature).
Item Type:Article
Copyright:© Institute of Physics and IOP Publishing Limited 2003
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/46505
Official URL:https://doi.org/10.1088/0960-1317/13/4/310
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 215195