Integration of trench isolation technolgy and plasma release for advanced MEMS design on standard silicon wafers


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Sarajlic, E. and Boer de, M.J. and Jansen, H.V. and Arnal, N. and Puech, M. and Krijnen, G. and Elwenspoek, M. (2003) Integration of trench isolation technolgy and plasma release for advanced MEMS design on standard silicon wafers. In: MicroMechanics Europe Workshop, MME 2003, November 2-4, 2003, Delft, The Netherlands.

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Abstract:A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/46300
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Metis ID: 214514