Analysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors

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Tosic Golo, Natasa and Kuper, Fred G. and Mouthaan, Ton J. (2002) Analysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors. IEEE Transactions on Electron Devices, 49 (6). pp. 1012-1018. ISSN 0018-9383

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Abstract:Electrical breakdown induced by systematic electrostatic discharge (ESD) stress of thin-film transistors used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, electrical simulations, electrothermal simulations, and postbreakdown observations. Breakdown due to very short pulses (up to 1 ¿s) shows a clear dependence on the channel length. A hypothesis that electrical breakdown in the case of short channel TFTs is due to the punch-through is built on this dependence and is proved by means of electrical simulations. Further, the presence of avalanche breakdown in amorphous silicon thin-film transistors is simulated and confirmed. It is finally assumed that the breakdown is a thermal process. Three-dimensional (3-D) electrothermal simulations are performed in the static and transient regime, confirming the location of the breakdown spot within the TFT from the electrical simulations and postbreakdown observations
Item Type:Article
Copyright:©2002 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/45172
Official URL:http://dx.doi.org/10.1109/TED.2002.1003722
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Metis ID: 211594