Enhanced transparency ramp-type Josephson contacts through interlayer deposition


Smilde, Henk-Jan H. and Hilgenkamp, Hans and Rijnders, Guus and Rogalla, Horst and Blank, Dave H.A. (2002) Enhanced transparency ramp-type Josephson contacts through interlayer deposition. Applied Physics Letters, 80 (24). pp. 4579-4581. ISSN 0003-6951

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Abstract:A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparency. The interlayer restores the surface damaged by ion milling and has the advantage of an all in situ barrier deposition between two superconductors, leading to clean and well-defined interfaces. The method has been applied to Josephson junctions between high (YBa2Cu3O7–) and low temperature (Nb) superconductors, separated by a Au barrier. Transmission electron microscopy images of these junctions reveal crystalline YBa2Cu3O7– up to the interface with the Au barrier. The junctions have improved critical current density values exceeding 20 kA/cm2, normal state resistances of 3×10–8 cm2 and IcRn products of 0.7 mV at 4.2 K. Furthermore, the junction properties can be controlled by varying the Au barrier thickness.
Item Type:Article
Copyright:© 2002 American Institute of Physics
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/43436
Official URL:https://doi.org/10.1063/1.1485305
Publisher URL:http://link.aip.org/link/?APPLAB/80/4579/1
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