Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness

Kolhatkar, J.S. and Salm, C. and Knitel, M.J. and Wallinga, H. (2002) Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness. In: 32nd European Solid-State Device Research Conference, ESSDERC, 24-26 September 2002, Firenze, Italy.

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Abstract:	The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched 'off' (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.
Item Type:	Conference or Workshop Item
Copyright:	©2002 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/43391
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