Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Backer de, Eddy and Bosch van den, Geert and Zawalski, Wade (2002) Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2002. IPFA, Singapore, Thailand, 8-12 July 2002, Singapore, Thailand.

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Abstract:	In this paper, we compare the hot carrier (HC) stress and oxide breakdown results with the fast and commonly used gate leakage current measurement. A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value of the gate leakage current is not only a failure indicator but also a good indicator of the reliability of the devices. A new testing method was developed to reveal latent as well as actual plasma damage, for a wide range of gate oxide quality in a very fast way. The gate oxide was stressed to break down using a ramping voltage. Moreover, oxide time-to-breakdown (t/sub bd/) was measured with constant voltage stress. These two testing methods have been compared.
Item Type:	Conference or Workshop Item
Copyright:	©2002 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/43317
Official URL:	http://dx.doi.org/10.1109/IPFA.2002.1025671
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