Size Dependence of the Magnetic and Electrical Properties of the Spin-Valve Transistor

Kim, Sungdong and Erve van 't, O.M.J. and Vlutters, R. and Jansen, R. and Lodder, J.C. (2002) Size Dependence of the Magnetic and Electrical Properties of the Spin-Valve Transistor. IEEE Transactions on Electron Devices, 49 (5). pp. 847-851. ISSN 0018-9383

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Abstract:	The electrical and magnetic properties of the spin-valve transistor (SVT) are investigated as a function of transistor size. A new fabrication process, designed to study the size dependence of the SVT properties, uses: silicon-on-insulator (SOI) wafers, a combination of ion beam and wet etching and a negative tone photoresist (SU8) as an insulating layer. The Si/Pt emitter and Si/Au collector Schottky barrier height do not depend on the transistor dimensions. The parasitic leakage current of the Si/Au collector is, however, proportional to its area. The relative collector current change with magnetic field is 240%, independent of size, while the transfer ratio starts to decrease for SVTs with an emitter area below 25 × 25 ¿m2. The maximum input current is found to be limited by the maximum current density allowed in the base (1.7 × 107 A/cm2), which is in agreement with the maximum current density for spin valves
Item Type:	Article
Copyright:	© 2002 IEEE
Research Group:	Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/43261
Official URL:	http://dx.doi.org/10.1109/16.998594
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