Monte carlo simulation of wet chemical etching of silicon

Share/Save/Bookmark

Veenendaal, Erik van and Suchtelen, Jaap van and Beurden, Paul van and Cuppen, Herma M. and Enckevort, Willem J.P. van and Nijdam, A. Jasper and Elwenspoek, Miko and Vlieg, Elias (2001) Monte carlo simulation of wet chemical etching of silicon. Sensors and Materials, 13 (6). pp. 343-350. ISSN 0914-4935

[img] PDF
Restricted to UT campus only
: Request a copy
430kB
Abstract:The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three important silicon surfaces: Si(111), Si(100) and Si(110). Interpretation of these simulations yields an understanding of the micromorphology of etched silicon surfaces and the orientation dependence of the etch rate.
Item Type:Article
Copyright:© 2001 MYU
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/42348
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 201133