Plasma process-induced latent damage on gate oxide-demonstrated by single-layer and multi-layer antenna structures


Share/Save/Bookmark

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred (2001) Plasma process-induced latent damage on gate oxide-demonstrated by single-layer and multi-layer antenna structures. In: 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, July 9-13, 2001, Singapore, Thailand.

[img]
Preview
PDF
428Kb
Abstract:In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant current stress (CCS) revealing technique. The presented results show that this method is effective for study of the latent damage
Item Type:Conference or Workshop Item
Copyright:©2001 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/42209
Official URL:http://dx.doi.org/10.1109/IPFA.2001.941490
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 200757