Relation between Plasma Process-Induced Oxide Failure Fraction and Antenna Ratio

Wang, Zhichun and Scarpa, Andrea and Salm, Cora and Kuper, Fred (2001) Relation between Plasma Process-Induced Oxide Failure Fraction and Antenna Ratio. In: 6th International Symposium on Plasma Process-Induced Damage, May 14-15, 2001, Monterey, CA, USA.

Preview

PDF
332Kb

Abstract:	Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18 ¿m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits
Item Type:	Conference or Workshop Item
Copyright:	©2001 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/41748
Official URL:	http://dx.doi.org/10.1109/PPID.2001.929968
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 113959