Effect of switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFET's

Wel van der, A.P. and Klumperink, E.A.M. and Nauta, B. (2001) Effect of switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFET's. Electronics Letters, 37 (1). pp. 55-56. ISSN 0013-5194

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Abstract:	Switched bias noise measurements on relatively large (>0.8 µm)n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 µm n-channel MOSFETs the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices.
Item Type:	Article
Copyright:	© 2001 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/41735
Official URL:	http://dx.doi.org/10.1049/el:20010008
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