Application of highly uniform LPCVD SiOxNy in SHG devices


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Wörhoff, K. and Lambeck, P.V. and Albers, H. and Noordman, O.F.J. and Hulst, N.F. van and Popma, Th.J.A. (1996) Application of highly uniform LPCVD SiOxNy in SHG devices. In: IEEE/LEOS Symposium Benelux Chapter, November 28, 1996, Enschede, The Netherlands (pp. pp. 226-229).

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Copyright:© 1996 University of Twente, MESA Research Institute
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/25486
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Metis ID: 130288