Material aspects for preparing HTS quasiparticle injection devices


Schneider, C.W. and Moerman, R. and Roesthuis, F.J.G. and Wichern, R.G. and Gerritsma, G.J. and Rogalla, H. (1997) Material aspects for preparing HTS quasiparticle injection devices. IEEE Transactions on Applied Superconductivity, 7 (2). pp. 2730-2733. ISSN 1051-8223

Abstract:Quasiparticle (QP) injection devices based on HTS could play an important role in future superconducting applications if material aspects can be better controlled. One reason why this kind of device received little attention in the past is the lack of an appropriate barrier for QP tunnelling. In a series of experiments, we used different barriers to test if they are suitable, i.e. if a current and possibly a voltage gain can be achieved. We improved the performance of planar YBCO/natural barrier/Au devices and a current gain of more than 6 at 40 K was observed. Most devices, however, showed signs of heating effects. Another barrier material was SrTiO3 with layers of 5-6 nm thickness. Current-voltage characteristics showed that the barriers were continuous and we observed current gains of up to 3 at 60 K. PrBa2 Cu3O7-x is an interesting candidate if one could overcome the problem of resonant inelastic tunnelling for QP. In a series of experiments we demonstrated that, even for 3 Mn thin PBCO barriers on a- and c-axis oriented YBa2Cu3O7-x, most devices showed at best a current gain of 1. However, we have indications that a current gain of 10 could be possible with unity voltage gain
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Copyright:© 1997 IEEE
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