Characterization of ramp-type YBa2Cu3O7 junctions by AFM

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Blank, D.H.A. and Rijnders, A.J.H.M. and Bergs, R.M.H. and Verhoeven, M.A.J. and Rogalla, H. (1997) Characterization of ramp-type YBa2Cu3O7 junctions by AFM. IEEE Transactions on Applied Superconductivity, 7 (2). pp. 3323-3326. ISSN 1051-8223

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Abstract: We studied the morphology of ramps in REBa2Cu3 O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by Atomic Force Microscopy (AFM) and High Resolution Electron Microscopy (HREM). The ramps were fabricated by Ar ion beam etching using different masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e., formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2Cu3-xGa xO7) on the ramp. First results show a crystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well-defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO and on the angle of incidence of the ion beam. Hard masks, like TIN, have a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence and, subsequently, in a low etching rate on the ramp
Item Type:Article
Copyright:© 1997 IEEE
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24474
Official URL:http://dx.doi.org/10.1109/77.622073
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