Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions

Share/Save/Bookmark

Verbist, K. and Lebedev, O.I. and Tendeloo, G. van and Verhoeven, M.A.J. and Rijnders, A.J.H.M. and Blank, D.H.A. and Rogalla, H. (1997) Ga segregation in DyBa2Cu3O7-δ/PrBa2Cu3-xGaO7-δ/DyBa2Cu3O7-δ ramp-type Josephson junctions. Applied physics letters, 70 (9). pp. 1167-1169. ISSN 0003-6951

[img] PDF - Published Version
Restricted to UT campus only
: Request a copy
653kB
Abstract:Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-delta materials (RE=rare earth)
Item Type:Article
Copyright:© 1997 American Institute of Physics
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/24470
Official URL:https://doi.org/10.1063/1.118515
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 129270