Ga-segregation in DyBa2Cu3O7-delta/PrBa2Cu3-xGaO7-delta/DyBa2Cu3O7-delta ramp-type Josephson junctions

Verbist, K. and Lebedev, O.I. and Tendeloo van, G. and Verhoeven, M.A.J. and Rijnders, A.J.H.M. and Blank, D.H.A. and Rogalla, H. (1997) Ga-segregation in DyBa2Cu3O7-delta/PrBa2Cu3-xGaO7-delta/DyBa2Cu3O7-delta ramp-type Josephson junctions. Applied Physics Letters, 70 (9). pp. 1167-1169. ISSN 0003-6951

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Abstract:	Ramp-type Josephson junctions with highly doped PrBa2Cu3-xGaxO7-delta barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1-0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using substituted REBa2Cu3O7-delta materials (RE=rare earth)
Item Type:	Article
Copyright:	© 1997 American Institute of Physics
Faculty:	Science and Technology (TNW)
Research Group:	Inorganic Materials Science (IMS) Low Temperatures - Biomagnetism (LT)
Link to this item:	http://purl.utwente.nl/publications/24470
Official URL:	http://dx.doi.org/10.1063/1.118515
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