Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

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Verbist, K. and Lebedev, O.I. and Tendeloo, G. van and Verhoeven, M.A.J. and Rijnders, A.J.H.M. and Blank, D.H.A. (1996) Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions. Superconductor Science and Technology, 9 (11). pp. 978-984. ISSN 0953-2048

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Abstract:The dependence of the ramp geometry on high- or low-angle ion-beam etching, used to structure ramp-type Josephson junctions based on high- superconductors, is investigated by cross-section transmission electron microscopy. The surface quality, interfaces and crystal defects are analysed by high-resolution electron microscopy. Technical difficulties to reproducibly obtain the desired slope angle and shape make high-angle ion-beam etching less interesting although the surface quality is comparable and no systematic differences in electrical properties are observed.
Item Type:Article
Copyright:© IOP Publishing Limited 1996
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24448
Official URL:http://dx.doi.org/10.1088/0953-2048/9/11/009
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