Substrate-induced pairing of Si ad-dimers on the Si(100)surface
Braun, Oleg M. and Valkering, Theo P. and Opheusden van, Joost H.J. and Zandvliet, H.J.W. (1997) Substrate-induced pairing of Si ad-dimers on the Si(100)surface. Surface Science, 384 (1-3). pp. 129-135. ISSN 0039-6028
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| Abstract: | The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics. |
| Item Type: | Article |
| Copyright: | © 1997 Elsevier Science |
| Faculty: | Science and Technology (TNW) |
| Research Group: | |
| Link to this item: | http://purl.utwente.nl/publications/24302 |
| Official URL: | http://dx.doi.org/10.1016/S0039-6028(97)00181-7 |
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Metis ID: 129102

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