High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: ßL optimization

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IJsselsteijn, R.P.J. and Hilgenkamp, J.W.M. and Veldhuis, D. and Flokstra, J. and Rogalla, H. (1994) High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: ßL optimization. Physica C: Superconductivity, 235-24 (5). pp. 3353-3354. ISSN 0921-4534

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Abstract:Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter ßL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 µ0·Hz (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10¿65 K).
Item Type:Article
Copyright:© 1994 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24270
Official URL:http://dx.doi.org/10.1016/0921-4534(94)91203-3
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Metis ID: 129070