High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

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IJsselsteijn, R.P.J. and Hilgenkamp, J.W.M. and Veldhuis, D. and Flokstra, J. and Rogalla, H. and Traeholt, C. and Zandbergen, H.W. (1995) High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching. IEEE transactions on applied superconductivity, 5 (2). pp. 2513-2516. ISSN 1051-8223

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Abstract:Focused ion beam etching has been used to pattem dc SQUIDS into previously characterised template bi-epitaxial glain boundary junctions. Using this technique the screening parameter can be optimised for a chosen tempem- (in our cwe 30 K). Electrical characteristics, including noise measmments, am
presented. A minimal white noise level of 22 µO,.Hz-'n (1.8~102' J.Hz-') has been obtained at 20 K. Using bias c m n t modulation the llf noise could almost completely be suppressed down to 1 Hz in the entixe tempemtam range (10-65 K).
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Copyright:© 1995 IEEE
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24235
Official URL:http://dx.doi.org/10.1109/77.403101
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