High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

IJsselsteijn, R.P.J. and Hilgenkamp, J.W.M. and Veldhuis, D. and Flokstra, J. and Rogalla, H. and Traeholt, C. and Zandbergen, H.W. (1995) High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching. IEEE Transactions on Applied Superconductivity, 5 (2, Par). pp. 2513-2516. ISSN 1051-8223

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Abstract:	Focused ion beam etching has been used to pattem dc SQUIDS into previously characterised template bi-epitaxial glain boundary junctions. Using this technique the screening parameter can be optimised for a chosen tempem- (in our cwe 30 K). Electrical characteristics, including noise measmments, am presented. A minimal white noise level of 22 µO,.Hz-'n (1.8~102' J.Hz-') has been obtained at 20 K. Using bias c m n t modulation the llf noise could almost completely be suppressed down to 1 Hz in the entixe tempemtam range (10-65 K).
Item Type:	Article
Copyright:	©1995 IEEE
Faculty:	Science and Technology (TNW)
Research Group:	Low Temperatures - Biomagnetism (LT)
Link to this item:	http://purl.utwente.nl/publications/24235
Official URL:	http://dx.doi.org/10.1109/77.403101
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