Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

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Joosse, Koen and Boguslavskij, Yurij M. and Vargas, Laura and Gerritsma, Gerrit J. and Rogalla, Horst (1995) Transistor performance of high-Tc three terminal devices based on carrier concentration modulation. IEEE Transactions on Applied Superconductivity, 5 (2, Par). pp. 2883-2886. ISSN 1051-8223

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Abstract:Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-T/sub c/ materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements
Item Type:Article
Copyright:©1995 IEEE
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24234
Official URL:http://dx.doi.org/10.1109/77.403194
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Metis ID: 129034