Magnetoresistance of PrBa2Cu3O7-δ thin films

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Ancum, G.K. van and Verhoeven, M.A.J. and Blank, D.H.A. and Rogalla, H. (1995) Magnetoresistance of PrBa2Cu3O7-δ thin films. Physical review B: Condensed matter, 52 (21). pp. 15644-15647. ISSN 0163-1829

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Abstract:Transport of charge carriers in PrBa2Cu3O7-δ (PBCO) is often described by variable-range hopping (VRH). Until now the VRH mechanism was confirmed merely on the basis of a temperature dependence of the resistivity following Mott's law. In this article we show a positive magnetoresistance in PBCO thin films, depending exponentially on the applied magnetic field. This provides substantial additional evidence for a variable-range hopping transport mechanism. Both a strong-field and a weak-field magnetoresistance can be identified. At temperatures above 30 K we observe weak-field magnetoresistance, at 4.2 K we detect a transition from weak-field to strong-field magnetoresistance at a magnetic field of approximately 4.5 T. In the weak-field regime the radius of the localized wave function is only affected marginally by the applied magnetic field. In the strong-field regime the radius of the localized wave function decreases with increasing magnetic field. From the measurements in the strong-field regime we obtain an estimate for the two-dimensional density of localized states in the PBCO thin film of approximately 2�1013 1/eVm2.

Item Type:Article
Copyright:©1995 The American Physical Society
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24233
Official URL:http://dx.doi.org/10.1103/PhysRevB.52.15644
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Metis ID: 129033