Surface disorder production during plasma immersion implantation and high energy ion implantation

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El-Sherbiny, M.A. and Khanh, N.Q. and Wormeester, H. and Fried, M. and Lohner, T. and Pinter, I. and Gyulai, J. (1996) Surface disorder production during plasma immersion implantation and high energy ion implantation. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 118 (1-4). pp. 728-732. ISSN 0168-583X

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Abstract:High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer is much higher than the projected range of P ions and it is comparable with that of protons.

Another example of surface damage investigation is the analysis of anomalous surface disorder created by 900 keV and 1.4 MeV Xe implantation in 100 silicon. For the 900 keV implants the surface damage was also characterized with spectroellipsometry (SE). Evaluation of ellipsometric data yields thickness values for surface damage that are in reasonable agreement with those obtained by RBS.
Item Type:Article
Copyright:© 1996 Elsevier Science
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24148
Official URL:http://dx.doi.org/10.1016/0168-583X(95)01110-2
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Metis ID: 128947