The Concept of Two Mobilities in Homoepitaxial Growth

Rosenfeld, Georg and Poelsema, Bene and Comsa, George (1995) The Concept of Two Mobilities in Homoepitaxial Growth. Journal of Crystal Growth, 151 (1-2). pp. 230-232. ISSN 0022-0248

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Abstract:	A general kinetic concept is introduced which can be used to control growth modes in homoepitaxy. Its basic idea is that during growth of a layer, the characteristics length scale associated with nucleation is deliberately varied. The power of this concept lies in the fact that it can be realized experimentally in a variety of ways and is not restricted to special systems. It helps to understand various effects reported in the literature and may serve as a guideline for future methods of growth manipulation.
Item Type:	Article
Copyright:	© 1995 Elsevier Science
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/24134
Official URL:	http://dx.doi.org/10.1016/0022-0248(95)00077-1
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Metis ID: 128933