Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

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Lohner, T. and Fried, M. and Gyulai, J. and Vedam, K. and Nguyen, N.V. and Hanekamp, L.J. and Silfhout, A. van (1993) Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon. Thin Solid Films, 233 (1-2). pp. 117-121. ISSN 0040-6090

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Abstract:We previously developed a fitting method of several parameters to evaluate ion-implantation-caused damage profiles from spectroscopic ellipsometry (SE) (M. Fried et al., J. Appl. Phys., 71 (1992) 2835). Our optical model consists of a stack of layers with fixed and equal thicknesses and damage levels described by a depth profile function (coupled half Gaussians). The complex refractive index of each layer is calculated from the actual damage level by Bruggeman effective medium approximation (EMA) using crystalline (c-Si) and amorphous (a-Si) silicon as end-points. Two examples are presented of the use of this method with modified optical models. First, we investigated the surface damage formed by room temperature B+ and N+ implantation into silicon. For the analysis of the SE data we added a near surface amorphous layer to the model with variable thickness. Second, we determined 20 keV B+ implantation-caused damage profiles in relaxed (annealed) amorphous silicon. In this special case, the complex refractive index of each layer was calculated from the actual damage level by the EMA using relaxed a-Si and implanted a-Si as end-points. The calculated profiles are compared with Monte Carlo simulations (TRIM code); good agreement is obtained.
Item Type:Article
Copyright:© 1993 Elsevier Sequoia
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Link to this item:http://purl.utwente.nl/publications/24081
Official URL:http://dx.doi.org/10.1016/0040-6090(93)90071-V
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