Change of the surface induced optical anisotropy of the clean Si(110) surface by oxidation

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Wormeester, H. and Molenbroek, A.M. and Wijers, C.M.J. and Silfhout, A. van (1992) Change of the surface induced optical anisotropy of the clean Si(110) surface by oxidation. Surface Science, 260 (1-3). pp. 31-36. ISSN 0039-6028

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Abstract:Normal incidence ellipsometry has been used to measure the change in the complex anisotropic reflectance ratio ¿ upon oxidation of the clean Si(110)16 × 2 surface. The spectroscopic change in the amplitude of ¿ (tan(¿)) shows a broad maximum of height 1.4 × 10¿3 in the high energy region above 2.5 eV. No phase shift difference for the reflectance coefficients belonging to the surface principal optical axes has been measured. A Kramers-Kronig transformation of the amplitude ratio showed that a change in the phase is not expected. The change in tan(¿) indicates that the change in reflection upon oxidation in the optical region ismainly in the (10) direction.
Item Type:Article
Copyright:© 1992 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24069
Official URL:http://dx.doi.org/10.1016/0039-6028(92)90015-X
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Metis ID: 128868